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Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs GE• Designed for :
- Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed - low VCE(sat) • Low EMI
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-220-3-31 (TO-220 FullPak) Type VCE IC;Tc=100°C VCE(sat),Tj=25°CTj,max Marking Code Package Ordering Code
K06T60 TO-220-FP Q67040S4678
IKA06N60T 600V 6A Maximum Ratings
1.5V 175°C
Parameter Symbol Value Unit Collector-emitter voltage
DC collector current, limited by Tjmax TC = 25°C TC = 100°C
Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 175°C
Diode forward current, limited by Tjmax TC = 25°C TC = 100°C
Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time1) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C
Operating junction temperature Storage temperature
Tj -40...+175 °C Tstg -55...+175
W Ptot 28 VGE IF -
VCE 600 V IC
12 6
ICpuls 18 18 12 6
IFpuls 18 ±20
V
tSC 5 µs
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
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IKA06N60T
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Thermal Resistance
Parameter Symbol Conditions Max. Value UnitCharacteristic
IGBT thermal resistance, junction – case
Diode thermal resistance, junction – case Thermal resistance, junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value Parameter Symbol Conditions Unit
min. typ. max. Static Characteristic
Collector-emitter breakdown voltage Collector-emitter saturation voltage
V(BR)CESVGE=0V,
IC=0.25mA VCE(sat)
VGE = 15V, IC=6A Tj=25°C Tj=175°C
Diode forward voltage
Gate-emitter threshold voltage Zero gate voltage collector current
Gate-emitter leakage current Transconductance Integrated gate resistor
IGES gfs RGint VGE(th) ICES VF
VGE=0V, IF=6A Tj=25°C Tj=175°C IC=0.18mA, VCE=VGE
VCE=600V,VGE=0V Tj=25°C Tj=175°C
VCE=0V,VGE=20V VCE=20V, IC=6A
- -
- -
40 700
µA
V 600 - - - - - -
1.5 1.8 1.6 1.6
2.05 - 2.05
RthJA 80 RthJCD RthJC 5.3 K/W
6.5 4.1 4.6 5.7 - - 100 nA - 3.6 - S none Ω
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Dynamic Characteristic Input capacitance Output capacitance
Reverse transfer capacitance Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case Short circuit collector current1)
IC(SC)
VGE=15V,tSC≤5µs VCC = 400V, Tj = 25°C
- 55 - A
VGE=0V, Coss f=1MHz Crss QGate
VCC=480V, IC=6A VGE=15V
LE P-TO-220-3-31 - 7 - nH
- 28 - - 11 - - 42 - nC
Ciss - pF 368 - VCE=25V,
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions Unit
min. Typ. max. IGBT Characteristic Turn-on delay time Rise time
Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy
Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak rate of fall of reverse recovery current during tb
td(on) - 9.4 - ns Tj=25°C,
VCC=400V,IC=6A, tr - 5.6 - VGE=0/15V,
td(off) - 130 - RG=23Ω, tf Lσ2)=60nH, - 58 - 2)
Cσ=40pF mJ Eon - 0.09 - Energy losses include
Eoff - 0.11 - “tail” and diode
reverse recovery. - 0.2 - Ets
trr - 123 - ns Tj=25°C,
Qrr - 190 - nC VR=400V, IF=6A, dirr/dt
- 450 - A/µs
Diode peak reverse recovery current Irrm - 5.3 - A diF/dt=550A/µs
1)2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Rev. 2 Oct-04
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IKA06N60T
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TrenchStop series
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Parameter Symbol Conditions Unit
min. typ. max. IGBT Characteristic Turn-on delay time Rise time
Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy
Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak rate of fall of reverse recovery current during tb
td(on) - 8.8 - ns Tj=175°C,
VCC=400V,IC=6A, tr - 8.2 - VGE=0/15V,
td(off) - 165 - RG= 23Ω tf Lσ1)=60nH, - 84 - 1)
Cσ=40pF mJ Eon - 0.14 - Energy losses include
Eoff - 0.18 - “tail” and diode
reverse recovery. - 0.335 - Ets
trr - 180 - ns Tj=175°C
Qrr - 500 - nC VR=400V, IF=6A, dirr/dt
- 285 - A/µs
Diode peak reverse recovery current Irrm - 7.6 - A diF/dt=550A/µs
1)
Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
4
Rev. 2 Oct-04
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IKA06N60T
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TrenchStop series
tp=1µs10A
15ATC=80°C10ATC=110°C5µs10µsIC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 1A
50µs5AIc500µs0,1A
5msDCIc0A10Hz
100Hz
1kHz
10kHz
100kHz
1V10V100V1000V
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23Ω)
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;VGE=15V)
25W8A
Ptot, POWER DISSIPATION 20W
IC, COLLECTOR CURRENT 6A
15W
4A
10W
2A
5W
0W25°C
50°C75°C100°C125°C150°C
0A
25°C75°C125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature (Tj ≤ 175°C)
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
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15A15A
12A15V13VIC, COLLECTOR CURRENT IC, COLLECTOR CURRENT VGE=20VVGE=20V12A
15V13V9A
11V9V6A
7V9A
11V9V6A
7V3A3A
0A
0V
1V
2V
3V
0A
0V
1V
2V
3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
15A
3,0V
IC=12A2,5V2,0V1,5V1,0V0,5V0,0V
-50°C
IC=3AIC, COLLECTOR CURRENT 12A
9A
IC=6A6A
TJ=175°C25°C0A
3A
0V2V4V6V8V10V0°C50°C100°C
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
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td(off)td(off)100nst, SWITCHING TIMES t, SWITCHING TIMES tf100nstftd(on)tr10nstd(on)10nstr1ns0A
3A
6A
9A
12A
15A
1ns10Ω30Ω50Ω70Ω90Ω
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current (inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 23Ω, Dynamic test circuit in Figure E)
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor (inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE 100nstd(off)6V5V4V3Vmin.2V1V0V-50°C
max.t, SWITCHING TIMES tftyp.10nstd(on)tr1ns50°C100°C150°C0°C50°C100°C150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature (IC = 0.18mA)
Power Semiconductors
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*) Eon and Ets include losses0,6 mJ due to diode recovery*) Eon and Ets include losses due to diode recoveryEts* SESES0,5 mJts*OL YGR0,4 mJENE GN0,3 mJEIoffHCTIW0,2 mJESon* ,E0,1 mJ0,0 mJ0A2A4A6A8A10A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current (inductive load, TJ=175°C,
VCE=400V, VGE=0/15V, RG=23Ω, Dynamic test circuit in Figure E)
*) Eon and Ets include losses due to diode recovery0,4mJSESSOL YG0,3mJRENE GEts*NI0,2mJHCTIWEoffS ,E0,1mJEon*0,0mJ50°C100°C150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE=400V,
VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E)
Power Semiconductors
8
SE0,4 mJSSOL YG0,3 mJREon*ENE GNIH0,2 mJECoffTIWS0,1 mJ0,0 mJ10Ω30Ω55Ω80Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor (inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E)
*) Eon and Ets include losses 0,5mJ due to diode recoverySESSEOts*L 0,4mJYGRENE0,3mJ EGoffNIHCT0,2mJIWESon*0,1mJ0,0m200VJ300V400V500VVCE, COLLECTOR-EMITTER VOLTAGE
Figure 16.Typical switching energy losses
as a function of collector emitter voltage
(inductive load, TJ = 175°C, VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E)
Rev. 2 Oct-04
E,
E,
IKA06N60T
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TrenchStop series
1nFVGE, GATE-EMITTER VOLTAGE 15V
Ciss120V10V
480Vc, CAPACITANCE 100pFCossCrss10pF5V
0V
0nC10nC20nC30nC40nC50nC0V10V20V
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=6 A)
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage (VGE=0V, f = 1 MHz)
12µs
IC(sc), short circuit COLLECTOR CURRENT 80A
tSC, SHORT CIRCUIT WITHSTAND TIME 10µs
60A
8µs
6µs
40A
4µs
20A
2µs
0A12V
14V16V18V
0µs
10V
11V12V13V14V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C)
Power Semiconductors
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TrenchStop series
D=0.5ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE D=0.50.210K/W
0
10K/W0
0.20.10.050.020.01R1R,(K/W) τ, (s) -20.381 1.867*10 2.57 1.350-30.645 2.208*10 -41.454 5.474*10 -50.062 5.306*10 -10.186 5.926*10 R260.10.050.020.01R,(K/W) τ, (s) -20.403 1.773*10 2.57 1.346-30.938 1.956*10 -42.33 4.878*10 -50.071 4.016*10 -1175 5.684*10 R1R2610K/W
-1
10K/W-1
C1=τ1/R1C2=τ2/R2C1=τ1/R1C2=τ2/R2single pulsesingle pulse10µs100µs1ms10ms100ms1s110K/W
-2
10µs100µs1ms10ms100ms1s1
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
tP, PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse width (D=tP/T)
250ns
Qrr, REVERSE RECOVERY CHARGE 0,5µC
trr, REVERSE RECOVERY TIME TJ=175°C0,4µC
200ns
150ns
TJ=175°C0,3µC
100ns
0,2µC
TJ=25°C50ns
TJ=25°C0,1µC
0ns
200A/µs400A/µs600A/µs800A/µs0,0µC
200A/µs
400A/µs600A/µs800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope (VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current slope
(VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
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TJ=175°CIrr, REVERSE RECOVERY CURRENT 8A
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT -500A/µsTJ=25°C-400A/µs6A
TJ=25°C-300A/µs4A
TJ=175°C-200A/µs2A
-100A/µs0A
200A/µs400A/µs600A/µs800A/µs
0A/µs200A/µs400A/µs600A/µs800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current slope
(VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
10A
2,0VIF=12AVF, FORWARD VOLTAGE IF, FORWARD CURRENT 8A
6A1,5V
3A1,0V
6A
4A
TJ=175°C2A
25°C0,5V
0A
0,0V
0,0V0,5V1,0V1,5V2,0V
0°C50°C100°C150°C
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
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11 Rev. 2 Oct-04
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TrenchStop series P-TO220-3-31 dimensions symbol [mm] [inch] min max 0.4084 0.41840.6245 0.63450.0256 0.03060.1160 typ. 0.124 0.1280.2384 0.25840.5304 0.54040.125 0.1350.0177 0.02470.0484 0.05340.100 typ. 0.1800 0.19000.1013 0.11130.0990 0.1030 min maxA 10.37B 15.86C 0.65D 10.6316.120.782.95 typ. 3.256.5613.733.430.631.36E 3.15F 6.05G 13.47H 3.18K 0.45L 1.23M 2.54 typ. 4.832.832.62 N 4.57P 2.57T 2.51 Power Semiconductors
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i,vdiF/dttrr=tS+tFQrr=QS+QFtrrIF tSQStF10% IrrmtVRIrrmQFdirr /dt90% Irrm Figure C. Definition of diodes switching characteristics Tj(t)p(t)τ1r1r2τ2τnrnr1r2rnFigure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance Lσ =60nH and Stray capacity Cσ =40pF.
Power Semiconductors
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Published by
Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München
© Infineon Technologies AG 2004 All Rights Reserved.
Attention please!
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings
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Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
14 Rev. 2 Oct-04
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