Semiconductor memory device and method of forming

专利名称：Semiconductor memory device and method

of forming the same

发明人：Ki-Yeol Byun,Chan-Kwang Park,Jae-Hwan

Moon,Tae-Wan Lim,Seung-Ah Kim

申请号：US13094229申请日：20110426公开号：US08450170B2公开日：20130528

专利附图：

摘要：Provided are a semiconductor device and a method of forming the

semiconductor device. The semiconductor device includes an active region of which an

edge is curved. The semiconductor device includes a gate insulating layer, a floating gate,a gate interlayer dielectric layer and a control gate line on the active region. Thesemiconductor device includes an oxide pattern having a concave top surface betweenadjacent floating gates. The control gate may be sufficiently spaced apart from the activeregion by the oxide pattern. The method can provide a semiconductor device thatincludes a reoxidation process, an active region having a curved edge and an oxidepattern having a top surface of a curved concave shape.

申请人：Ki-Yeol Byun,Chan-Kwang Park,Jae-Hwan Moon,Tae-Wan Lim,Seung-Ah Kim

地址：Gyeonggi-do KR,Seoul KR,Suwon-si KR,Suwon-si KR,Suwon-si KR

国籍：KR,KR,KR,KR,KR

代理机构：Onello & Mello, LLP

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