INTEGRATED STRUCTURE OF MEMS DEVICE AND CMOS IMAGE

专利名称：INTEGRATED STRUCTURE OF MEMS DEVICE

AND CMOS IMAGE SENSOR DEVICE ANDFABRICATING METHOD THEREOF

发明人：Hui-Shen Shih申请号：US12334514申请日：20081214

公开号：US20100148283A1公开日：20100617

专利附图：

摘要：An integrated structure of MEMS device and CIS device and a fabricatingmethod thereof includes providing a substrate having a CIS region and a MEMS region

defined therein with a plurality of CIS devices positioned in the CIS region; performing amultilevel interconnect process to form a multilevel interconnect structure in the CISregion and the MEMS region and a micro-machined mesh metal in the MEMS region on afront side of the substrate; performing a first etching process to form a chamber inMEMS region in the front side of the substrate; forming a first mask pattern and a secondmask pattern respectively in the CIS region and the MEMS region on a back side of thesubstrate; and performing a second etching process to form a plurality of vent holesconnecting to the chamber on the back side of the substrate through the second maskpattern.

申请人：Hui-Shen Shih

地址：Chang-Hua Hsien TW

国籍：TW

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