Insulated gate field effect transistor and method

专利名称：Insulated gate field effect transistor and

method for forming the same

发明人：Shunpei Yamazaki,Yasuhiko Takemura申请号：US09987342申请日：20011114

公开号：US20020048868A1公开日：20020425

专利附图：

摘要：In an inverted stagger type thin-film transistor, the preparing process thereofcan be simplified, and the unevenness of the thin film transistor prepared thereby can bereduced. That is, disclosed is a preparing method which comprises selectively doping a

semiconductor on a gate insulating film with an impurity to form source, drain, andchannel forming regions, and conducting a laser annealing to them, or a preparingmethod which comprises selectively doping the semiconductor region with an impurity bya laser doping method.

申请人：YAMAZAKI SHUNPEI,TAKEMURA YASUHIKO

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