专利名称：METHOD OF FORMING INTER-LEVEL
DIELECTRIC STRUCTURES ONSEMICONDUCTOR DEVICES
发明人：DOUGLAS M. REBER,MEHUL D. SHROFF申请号：US14687360申请日：20150415
公开号：US20160307791A1公开日：20161020
专利附图：
摘要：A semiconductor device and a method for making the semiconductor device areprovided. The method of making the semiconductor device may include patterning a
layer for a first conductor and a second conductor, plating patterned portions of thelayer to form the first conductor and the second conductor, removing patterned materialto form an air gap between the first conductor and the second conductor, applying aself-supporting film on top of the first conductor and the second conductor to enclosethe air gap, and reacting the self-supporting film causing the self-supporting film to besubstantially non-conductive.
申请人：FREESCALE SEMICONDUCTOR, INC.
地址：AUSTIN TX US
国籍：US
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