专利名称：Crack stop structure enhancement of the
integrated circuit seal ring
发明人：Alfred Yao,Kai Chong Chan申请号：US12378513申请日：20090217
公开号：US20100207237A1公开日：20100819
专利附图：
摘要：An improved crack stop structure (and method of forming) is provided within adie seal ring of an integrated circuit die to increase crack resistance during the dicing of asemiconductor wafer. The crack stop structure includes a stack layer (of alternating
insulating and conductive layers) and an anchor system extending from the stack layer toa predetermined point below the surface of the substrate. A crack stop trench is formedin the substrate and filled with material having good crack resistance to anchor the stacklayer to the substrate.
申请人：Alfred Yao,Kai Chong Chan
地址：Singapore SG,Singapore SG
国籍：SG,SG
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